The first sample type was nominally a single junction GaInNAs p-i-n type solar cell shown in Figure 1a.
#Pc1d for windows 8 cracker
The dopants were introduced from standard dopant cells, group III elements from SUMO cells and group V elements from valved cracker sources except nitrogen which was brought to the system using a radio-frequency plasma source. The experimental samples were prepared by Veeco GEN20 molecular beam epitaxy (MBE) system. The effects of thermal annealing are also discussed. Here, we present a study for the simulation of single junction dilute nitride solar cells and extraction of useful physical parameters that can be used for simulation of high efficiency multi-junction cells. Although the potential of this approach has been validated experimentally, the connection between experimental results and simulation, in particular the reliable parameter extraction, has remained elusive. The use of 1 eV dilute nitride sub-junctions have been actively studied both experimentally and theoretically. This is due to their ability to increase the efficiency of solar cells used in terrestrial concentrator photovoltaics and space power systems. GaInNAs-based semiconductors, have drawn increased attention in the photovoltaics research community. It was also found that the GaInNAs lower doping levels in p-i-n solar cells grown at lowered As/III flux ratios were associated with increased carrier lifetimes. The PC1D modelling was found to work well also for GaInNAs p-i-n solar cells with opposite polarity. The change of doping type and the shift of the physical location of the pn-junction were confirmed by Kelvin-probe force microscopy. The model reveals that non-annealed MBE-grown GaInNAs material has an n-type doping that evolves to p-type upon rapid thermal annealing.
Based on these, we have constructed a model that can explain the changes in short circuit current and open circuit voltage of n-i-p solar cells subjected to rapid thermal annealing. Using PC1D simulation and fitting to experimental current-voltage and external quantum efficiency data, we retrieve the phenomenological material parameters for GaInNAs solar cells. Parameter extraction procedure and simulation of dilute nitride solar cells are reported. *Corresponding Author: 5 November 2015 Accepted 3 June 2016 Publication 1 August 2016 Abstract Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, FI-33720 Tampere, Finland High Efficiency Dilute Nitride Solar Cells: Simulations Meet ExperimentsĪ.